Product Summary
The D2012 is a Si NPN transistor.
Parametrics
D2012 absolute maximum ratings: (1)Collector-Base Voltage BVCBO: 60 V; (2)Collector-Emitter Voltage BVCEO: 50 V; (3)Emitter-Base Voltage BVEBO: 7 V; (4)Collector Dissipation Tcase=25℃: 30 W; Tamb=25℃ PCM: 1.5 W; (5)Collector Current DC ICM: 3 A; Pulse Icp: 7 A; (6)Base Current IB: 0.6 A; (7)Junction Temperature Tj: +150 ℃; (8)Storage Temperature Tstg: -55~+150 ℃.
Features
D2012 features: (1)Collector-Emitter voltage: BVCBO= 60V; (2)Collector current up to 3A; (3)High hFE linearity.
Diagrams
D2010UK |
Other |
Data Sheet |
Negotiable |
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D2011UK |
Other |
Data Sheet |
Negotiable |
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D2013UK |
Other |
Data Sheet |
Negotiable |
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D2014UK |
Other |
Data Sheet |
Negotiable |
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D2015L |
Littelfuse |
Rectifiers 200V 15A |
Data Sheet |
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D2015L52 |
Littelfuse |
Rectifiers 200V 15A |
Data Sheet |
Negotiable |
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