Product Summary

The D2012 is a Si NPN transistor.

Parametrics

D2012 absolute maximum ratings: (1)Collector-Base Voltage BVCBO: 60 V; (2)Collector-Emitter Voltage BVCEO: 50 V; (3)Emitter-Base Voltage BVEBO: 7 V; (4)Collector Dissipation Tcase=25℃: 30 W; Tamb=25℃ PCM: 1.5 W; (5)Collector Current DC ICM: 3 A; Pulse Icp: 7 A; (6)Base Current IB: 0.6 A; (7)Junction Temperature Tj: +150 ℃; (8)Storage Temperature Tstg: -55~+150 ℃.

Features

D2012 features: (1)Collector-Emitter voltage: BVCBO= 60V; (2)Collector current up to 3A; (3)High hFE linearity.

Diagrams

D2012 dimensions

D2010UK
D2010UK

Other


Data Sheet

Negotiable 
D2011UK
D2011UK

Other


Data Sheet

Negotiable 
D2013UK
D2013UK

Other


Data Sheet

Negotiable 
D2014UK
D2014UK

Other


Data Sheet

Negotiable 
D2015L
D2015L

Littelfuse

Rectifiers 200V 15A

Data Sheet

0-1: $0.65
1-10: $0.61
10-100: $0.58
100-250: $0.55
D2015L52
D2015L52

Littelfuse

Rectifiers 200V 15A

Data Sheet

Negotiable