Product Summary

The FU9024N is a HEXFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that FU9024N is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The FU9024N is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5Watts are possible in typical surface mount applications.

Parametrics

FU9024N absolute maximum ratings: (1)ID@Tc=25℃, continuous drain current, VGS@-10V: -11A; (2)ID@Tc=100℃, continuous drain current, VGS@-10V: -8A; (3)IDM, pulsed drain current: -44A; (4)PD@Tc=25℃, power dissipation: 38W; (5)linear derating factor: 0.3W/℃; (6)VGS, gate-to-source voltage: ±20V; (7)EAS, single pulse avalanche energy: 62mJ; (8)IAR, avalanche current: -6.6A; (9)dv/dt, peak diode recovery dv/dt: -10V/ns; (10)Tj, Tstg, operating junction and storage temperature range: -55 to +150℃; (11)soldering temperature, for 10seconds: 300℃.

Features

FU9024N features: (1)ultra low on-resistance; (2)P-channel ; (3)surface mount; (4)straight lead; (5)advanced process technology; (6)fast switching; (7)fully avalanche rated; (8)lead-free.

Diagrams