(China (Mainland))
Product Summary
The HAT2218 is a silicon N channel power MOS FET with schottky barrier diode high speed power switching.
Parametrics
HAT2218 absolute maximum ratings: (1)Drain to source voltage VDSS: 30 V; (2)Gate to source voltage VGSS: ±12 V; (3)Drain current ID: 8.0 A; (4)Drain peak current ID(pulse): 64 A; (5)Reverse drain current IDR: 8.0 A; (6)Channel dissipation Pch: 1.5 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
HAT2218 features: (1)Low on-resistance; (2)Capable of 4.5 V gate drive; (3)High density mounting; (4)Built-in Schottky Barrier Diode.
Diagrams
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 HAT2016R |
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HAT2019R |
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HAT2020R |
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HAT2022R |
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HAT2024R |
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HAT2025R |
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