Product Summary

The HY27UH08AG5M is a 2Gx8bit NAND Flash with spare 64Mx8 bit capacity. The HY27UH08AG5M is offered in 3.3V Vcc Power Supply. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. The HY27UH08AG5M contains 16,384 blocks, composed by 64 pages consisting in two NAND structures of 32 series connected Flash cells. The HY27UH08AG5M includes also extra features like OTP/Unique ID area, Read ID2 extension. TheHY27UH08AG5M is available in 48 - TSOP1 12 x 20 mm, 52 - TLGA 12X17mm.

Parametrics

HY27UH08AG5M absolute maximum ratings: (1)TA, Ambient Operating Temperature (Commercial Temperature Range): 0 to 70℃; Ambient Operating Temperature (Extended Temperature Range): -25 to 85℃; Ambient Operating Temperature (Industry Temperature Range): -40 to 85℃; (2)TBIAS Temperature Under Bias: -50 to 125℃; (3)TSTG, Storage Temperature: -65 to 150℃; (4)VIO, Input or Output Voltage: -0.6 to 4.6 V; (5)Vcc, Supply Voltage: -0.6 to 4.6 V.

Features

HY27UH08AG5M features: (1)high density nand flash memories: cost effective solutions for mass storage applications; (2)nand interface: ×8 width; multiplexed address/data; pinout compatibility for all densities; (3)supply voltage: 3.3V device VCC=2.7V to 3.6V; (4)memory cell array=(2k+64) Bytes×64pages×16384blocks; (5)status register; (6)electronic signature.

Diagrams

HY27UH08AG5M block diagram

HY27SA081G1M
HY27SA081G1M

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Negotiable 
HY27SA161G1M
HY27SA161G1M

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HY27SF081G2M
HY27SF081G2M

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HY27SF161G2M
HY27SF161G2M

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Negotiable 
HY27SG082G2M
HY27SG082G2M

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HY27SG162G2M
HY27SG162G2M

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Negotiable