Product Summary
The HY27UU08AG5A is a 2048M×8bit NAND flash with spare 64M×8bit capacity. The HY27UU08AG5A is offered in 3.3V VCC core power supply, 3.3V input-output power supply. The NAND cell of the HY27UU08AG5A provides the most cost-effective solution for the solid state mass storage market. The memory is divided into blocks that can be erased independently so it is possible to preserve vaid data while old data is ereased. The HY27UU08AG5A contains 8192blocks, composed by 128 pages consisting in two NAND structures of 32 series connected flash cells.
Parametrics
HY27UU08AG5A absolute maximum ratings: (1)TA, ambient operating termperature (commercial temeprature range): 0 to 70℃; ambient operating temperature (industrial temperature range): -40 to 85℃; (2)TBAS, temeperature under bias: -50 to 125℃; (3)Tstg, storage temperature: -65 to 150℃; (4)VIO, input or output voltage: -0.6 to 4.6V; (5)VCC, supply voltage: -0.6 to 4.6V.
Features
HY27UU08AG5A features: (1)high density nand flash memories: cost effective solutions for mass storage application; (2)multiplane architecture: array is spilt into two independent plannes; (3)nand interface: ×8 bus width; multiplexed address/data; pinout compatibility for all densities; (4)supply voltage: 3.3V device: VCC=2.7V to 3.6V; (5)memory cell array: 92k+64) bytes×128pages×8192blocks; (6)status register; (7)chip enable dont care: simple interface with microcontroller; (8)hardware data protection.
Diagrams
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