Product Summary

The HY27ut088G2A is a non-volatile Flash memory that uses NAND cell technology. The HY27ut088G2A operates 3.3V and 1.8V voltage supply. The size of a Page is either 528 Bytes (512 + 16 spare) or 264 Words (256 + 8 spare) depending on whether the device has a x8 or x16 bus width. The HY27ut088G2A features an open-drain Ready/Busy output that can be used to identify if the Program/ Erase/Read (PER) Controller is currently active. The use of an open-drain output allows the Ready/ Busy pins from several memories to be connected to a single pull-up resistor.

Parametrics

HY27ut088G2A absolute maximum ratings: (1)TBIAS, Temperature Under Bias: -50 to 125℃; (2)TSTG, Storage Temperature: -65 to 150℃; (3)VIO, Input or Output Voltage: -0.6 to 2.7 V; (4)VCC, Supply Voltage: -0.6 to 2.7 V.

Features

HY27ut088G2A features: (1)high density nand flsh memories; (2)nand interface; (3)supply voltage; (4)memory cell array; (5)page size; (6)block size; (7)fast block erase; (8)status register; (9)electronic signature; (10)sequential row read option; (11)automatic page 0 read at power-up option; (12)serial number option; (13)hardware data protetion; (14)data integrity.

Diagrams

HY27ut088G2A logic block diagram

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HY27SA081G1M

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HY27SF081G2M

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