Product Summary

The IRL3103S Advanced HEXFET Power MOSFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that IRL3103S is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRL3103S absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V: 64 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V: 45 A; (3)Pulsed Drain Current: 220 A; (4)PD @TC = 25℃, Power Dissipation: 94 W; (5)Linear Derating Factor: 0.63 W/℃; (6)Gate-to-Source Voltage: ±16 V; (7)Avalanche Current: 34 A; (8)Repetitive Avalanche Energy: 22 mJ; (9)Peak Diode Recovery dv/dt: 5.0 V/ns; (10)Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (11)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ); (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRL3103S features: (1)Advanced Process Technology; (2)Surface Mount (IRL3103S); (3)Low-profile through-hole (IRL3103L); (4)175℃ Operating Temperature; (5)Fast Switching; (6)Fully Avalanche Rated.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRL3103S
IRL3103S

MOSFET N-CH 30V 64A D2PAK
Data Sheet
Negotiable 
IRL3103SPBF
IRL3103SPBF
International Rectifier
MOSFET
Data Sheet
0-2000: $0.55
2000-3000: $0.55
IRL3103STRLPBF
IRL3103STRLPBF
International Rectifier
MOSFET
Data Sheet
0-2180: $0.51
2180-3200: $0.51
IRL3103STRRPBF
IRL3103STRRPBF
International Rectifier
MOSFET
Data Sheet
0-2180: $0.51
2180-3200: $0.51
IRL3103STRL
IRL3103STRL

MOSFET N-CH 30V 64A D2PAK
Data Sheet
Negotiable 
IRL3103STRR
IRL3103STRR

MOSFET N-CH 30V 64A D2PAK
Data Sheet
0-800: $1.46