Product Summary

The K4D263238E is 134,217,728 bits of hyper synchronous data rate Dynamic RAM organized as 4 x1,048,576 words by 32 bits, fabricated with SAMSUNG high performance CMOS technology. Synchronous features with Data Strobe allow extremely high performance up to 3.2GB/s/chip. I/O transactions of the K4D263238E are possible on both edges of the clock cycle. Range of operating frequencies, programmable burst length and programmable latencies allow the device to be useful for a variety of high performance memory system applications.

Parametrics

K4D263238E absolute maximum ratings: (1)Voltage on any pin relative to Vss VIN, VOUT: -0.5 ~ 3.6 V; (2)Voltage on VDD supply relative to Vss VDD: -1.0 ~ 3.6 V; (3)Voltage on VDD supply relative to Vss VDDQ: -0.5 ~ 3.6 V; (4)Storage temperature TSTG: -55 ~ +150 ℃; (5)Power dissipation PD: 3.3 W; (6)Short circuit current IOS: 50 mA.

Features

K4D263238E features: (1)VDD/VDDQ = 2.8V ±5% for -GC25; (2)VDD/VDDQ = 2.5V ±5% for -GC2A/33/36/40/45; (3)SSTL_2 compatible inputs/outputs; (4)4 banks operation; (5)MRS cycle with address key programs. Read latency 3, 4, 5(clock). Burst length (2, 4, 8 and Full page). Burst type (sequential & interleave); (6)Full page burst length for sequential burst type only; (7)Start address of the full page burst should be even; (8)All inputs except data & DM are sampled at the positive going edge of the system clock; (9)Differential clock input.

Diagrams

K4D263238E block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
K4D263238E-GC
K4D263238E-GC
Other

Data Sheet
Negotiable 
K4D263238E-GC33
K4D263238E-GC33
Other

Data Sheet
Negotiable