(China (Mainland))
Product Summary
The STU309DH is a dual enhancement mode field effect transistor(N and P channel).
Parametrics
STU309DH absolute maximum ratings: (1)Drain-Source Voltage VDS: N-channel=30V, P-channel=-30V; (2)Gate-Source Voltage VGS: N-channel=±20V, P-channel=±20V; (3)Drain Current-Continuous@Tc=25℃ ID: N-channel=18A, P-channel=-14A; Tc=70℃ ID: N-channel=15A, P-channel=-12A; (4)-Pulsed a IDM: N-channel=50A, P-channel=-50A; (5)Drain-Source Diode Forward Current IS: N-channel=10A, P-channel=-6A; (6)Maximum Power Dissipation PD Tc=25℃: 11W; Tc=70℃: 7.7W; (7)Operating Junction and Storage Temperature Range TJ, TS TG: -55 to 175℃.
Features
STU309DH characteristics: (1)On the condition of VGS=0V, ID=250uA, Drain-Source Breakdown Voltage BVDSS: min=30V; (2)On the condition of VDS=24V, VGS=0V, Zero Gate Voltage Drain Current IDSS: max=1μA; (3)On the condition of VGS=±20V, VDS=0V, Gate-Body Leakage IGSS max=±10μA.
Diagrams
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 STU309DH |
Other |
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Data Sheet |
Negotiable |
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