(China (Mainland))
Product Summary
The STU407DH is a dual Enhancement mode field effect transistor ( N and P channel).
Parametrics
STU407DH absolute maximum ratings: (1)Drain-Source Voltage VDS: N-channel: 40V; P-channel: -40V; (2)Gate-S ource Voltage VGS VGS: N-channel: ±20V; P-channel: ±20V; (3)Drain Current-Continuous @ Tc 25℃ ID: N-channel: 16A; P-channel: -12A; 70℃ ID: N-channel: 13.8A; P-channel: -10A; (4)-Pulsed IDM: N-channel: 50A; P-channel: -50A; (5)Drain-S ource Diode Forward Current IS: N-channel: 8A; P-channel: -6A; (6)Maximum Power Dissipation TC=25℃, PD: 11W; TC=70℃: 7.7W; (7)Operating Junction and S torage Temperature Range TJ , TSTG: -55 to 175℃.
Features
STU407DH characteristics: (1)On the conditions of VGS =0V, ID =250μA, Drain-Source Breakdown Voltage BVDSS: min=40V; (2)On the conditions of DS =32V, VGS =0V, Zero Gate Voltage Drain Current IDSS: max=1μA; (3)On the conditions of VGS =±20V, VDS =0V, Gate-Body Leakage IGSS: ±10μA.
Diagrams
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 STU407DH |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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STU407D |
Other |
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Negotiable |
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STU407DH |
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Negotiable |
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STU408D |
Other |
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Negotiable |
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STU409DH |
Other |
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Negotiable |
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STU410S |
Other |
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Data Sheet |
Negotiable |
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STU411D |
Other |
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Data Sheet |
Negotiable |
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