Product Summary

The TPIC2601 is a monolithic power DMOS array that consists of six electrically isolated N-channel enhancement-mode DMOS transistor TPIC2601 configured with a common source and open drains. Each transistor features integrated high-current zener diodes to prevent gate damage in the event that an overstress condition occurs. The zener diode TPIC2601 also provide up to 2000 V of ESD protection when tested using the human-body model.

Parametrics

TPIC2601 absolute maximum ratings: (1)Drain-to-source voltage, VDS: 60 V; (2)Gate-to-source voltage, VGS: –9 V to 18 V; (3)Continuous drain current, each output, all outputs on, TC = 25℃: 2 A; (4)Pulsed drain current, each output, IOmax, TC = 25℃: 10 A; (5)Continuous gate-to-source zener diode current, TC = 25℃: ±25 mA; (6)Pulsed gate-to-source zener diode current, TC = 25℃: ±250 mA; (7)Single-pulse avalanche energy, EAS, TC = 25℃: 105 mJ; (8)Continuous total power dissipation at (or below) TA = 25℃: 1.7 W; (9)Power dissipation at (or below) TC = 75℃, all outputs on: 18.75 W; (10)Operating virtual junction temperature range, TJ: –40℃ to 150℃; (11)Operating case temperature range, TC: –40℃ to 125℃; (12)Storage temperature range, Tstg: –40℃ to 125℃; (13)Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: 260℃.

Features

TPIC2601 features: (1)Low rDS(on): 0.25 W Typ; (2)High Output Voltage: 60 V; (3)Pulsed Current: 10 A Per Channel; (4)Avalanche Energy Capability: 105 mJ; (5)Input Transient Protection: 2000 V.

Diagrams

TPIC2601 test circuit

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TPIC2601KTC
TPIC2601KTC

Texas Instruments

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TPIC2601
TPIC2601

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Data Sheet

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