(China (Mainland))
Product Summary
The HAT2218 is a silicon N channel power MOS FET with schottky barrier diode high speed power switching.
Parametrics
HAT2218 absolute maximum ratings: (1)Drain to source voltage VDSS: 30 V; (2)Gate to source voltage VGSS: ±12 V; (3)Drain current ID: 8.0 A; (4)Drain peak current ID(pulse): 64 A; (5)Reverse drain current IDR: 8.0 A; (6)Channel dissipation Pch: 1.5 W; (7)Channel temperature Tch: 150 ℃; (8)Storage temperature Tstg: –55 to +150 ℃.
Features
HAT2218 features: (1)Low on-resistance; (2)Capable of 4.5 V gate drive; (3)High density mounting; (4)Built-in Schottky Barrier Diode.
Diagrams
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MOSFET N-CH 30V 55A LFPAKI |
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Negotiable |
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HAT2198R |
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HAT2197R-EL-E |
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HAT2195R-EL-E |
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MOSFET N-CH 30V 18A 8-SOP |
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HAT2195R |
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MOSFET N-CH 30V 18A 8-SOP |
Data Sheet |
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